J210 TO-92 3L ROHS

J210, J211, J212 SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM (J211, J212) HIGH INPUT IMPEDENCE LOW CAPACITANCE IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Gate-Drain or Gate-Source Voltage -25V Gate Current Total Device Dissipation @25°C Ambient (Derate 3.27 mW/°C) Operating Temperature Range 10mA TO-92 SOT-23 TOP VIEW J210, J211, J212 TOP VIEW SSTJ210, SSTJ211, SSTJ212 360mW -55 to +150 °C ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTICS SSTJ210 SSTJ211 SSTJ212 UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX IGSS Gate Reverse Current --- -100 --- -100 --- -100 pA VGS(off) Gate-Source Cutoff Voltage -1 -- -3 -2.5 -- -4.5 -4 -- -6 BVGSS Gate-Source Breakdown Voltage -25 -- -- -25 -- -- -25 -- -- V CONDITIONS VDS = 0, VGS = -15V (NOTE 1) VDS = 15V, ID = 1nA VDS = 0, IG = -1µA IDSS Drain Saturation Current 2 -- 15 7 -- 20 15 -- 40 mA VDS = 15V, VGS=0 (NOTE 2) IG Gate Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance -- -10 -- -- -10 -- -- -10 -- pA VDS = 10V, ID=1mA (NOTE 1) 4,000 -- -- 12,000 -- -- 150 -- -- 200 -- -- 200 -- 4 -- -- 4 -- -- 4 -- gfs gos CISS Crss en Equivalent Short-Circuit Input Noise Voltage 12,000 6,000 -- 12,000 7,000 µmho pF - 1 -- -- 1 -- -- 1 -- - 10 -- -- 10 -- -- 10 -- nV√Hz f=1kHz VDS = 15V, VGS=0 f=1MHz f=1kHz NOTE 1. Approximately doubles for every 10°C increase in TA. 2. Pulse test duration = 2ms. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Linear Systems, founded in 1987, uses patented and proprietary processes and designs to create its high performance discrete semiconductors. Expertise brought to the company is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company founder John H. Hall. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201113 07/25/2019 Rev A8 ECN# JS210_211_212